Stahlbush, R. E. : rechercher sur Z-Library

Année:

2009

Langue:

english

Fichier:

PDF, 746 KB

english, 2009

Stacking-fault formation and propagation in 4H-SiC PiN diodes

R. E. Stahlbush, M. Fatemi, J. B. Fedison, S. D. Arthur, L. B. Rowland, S. Wang

Journal:

Année:

2002

Langue:

english

Fichier:

PDF, 318 KB

english, 2002

Photoluminescence and Electroluminescence Imaging of Carrot Defect in 4H-SiC Epitaxy

Kendrick X. Liu, Robert E. Stahlbush, Mark E. Twigg, Joshua D. Caldwell, Evan R. Glaser, Karl D. Hobart, Francis J. Kub

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 435 KB

english, 2007

Observations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H-silicon carbide epitaxial layers

Chen, Y., Dudley, M., Liu, K. X., Stahlbush, R. E.

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 528 KB

english, 2007

4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer

Chung, Gil Yong, Loboda, Mark J., Zhang, J., Wan, Jian Wei, Carlson, E.P., Toth, T.J., Stahlbush, Robert E., Skowronski, Marek, Berechman, R., Sundaresan, Siddarth G., Singh, Ranbir

Journal:

Caldwell, Joshua D., Stahlbush, Robert E., Hobart, Karl D., Glembocki, Orest J., Liu, Kendrick X.

Année:

2011

Langue:

english

Fichier:

PDF, 999 KB

english, 2011

Reversal of forward voltage drift in 4H-SiC p-i-n diodes via low temperature annealing

Journal:

Stahlbush, Robert E., Zhang, Qing Chun Jon, Agarwal, Anant K., Mahadik, Nadeemullah A.

Année:

2007

Langue:

english

Fichier:

PDF, 434 KB

english, 2007

Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes

Journal:

Stahlbush, Robert E., Mahadik, Nadeemullah A., O'Loughlin, Michael J.

Année:

2012

Langue:

english

Fichier:

PDF, 1.47 MB

english, 2012

Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy

Journal:

Caldwell, Joshua D., Glembocki, Orest J., Stahlbush, Robert E., Hobart, Karl D.

Année:

2014

Langue:

english

Fichier:

PDF, 1.87 MB

english, 2014

[IEEE 19th International Symposium on Power Semiconductor Devices and IC's - Jeju, Korea (2007.05.27-2007.05.31)] Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's - lOkV 4H-SiC PiN Diodes Designed for Improved Switching Performance using Emitter Injection Control

Losee, P. A., Li, C., Wang, Y., Sharma, S. K., Chow, T. P., Bhat, I. B., Stahlbush, R. E., Gutmann, R. J.

Année:

2007

Langue:

english

Fichier:

PDF, 2.20 MB

english, 2007

Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H–SiC Epitaxial Layers

Myers-Ward, R. L., Mahadik, N. A., Wheeler, V. D., Nyakiti, L. O., Stahlbush, R. E., Imhoff, E. A., Hobart, K. D., Eddy, C. R., Gaskill, D. K.

Journal:

Crystal Growth & Design

Année:

2014

Langue:

english

Fichier:

PDF, 7.18 MB

english, 2014

Temperature-mediated saturation and current-induced recovery of the V[sub f] drift in 4H-SiC p-i-n diodes

Journal:

Journal of Applied Physics

Année:

2007

Langue:

english

Fichier:

PDF, 556 KB

english, 2007

Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy

Zhang, X., Skowronski, M., Liu, K. X., Stahlbush, R. E., Sumakeris, J. J., Paisley, M. J., O’Loughlin, M. J.

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 796 KB

english, 2007

[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - 4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield

Zhang, Qingchun, Burk, Al, Husna, Fatima, Callanan, Robert, Agarwal, Anant, Palmour, John, Stahlbush, Robert, Scozzie, Charles

Année:

2009

Langue:

english

Fichier:

PDF, 315 KB

english, 2009

Studies of a polymeric chromium phosphinate: Structure and static magnetic properties

Stahlbush, R. E., Bastuscheck, C. M., Raychaudhuri, A. K., Scott, J. C., Grubb, D., Gillman, H. D.

Journal:

Physical Review B

Année:

1981

Langue:

english

Fichier:

PDF, 1.37 MB

english, 1981

Differences in emission spectra of Si- and C-core partial dislocations

Liu, Kendrick X., Stahlbush, Robert E., Maximenko, Serguei I., Caldwell, Joshua D.

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 340 KB

english, 2007

Nucleation mechanism of dislocation half-loop arrays in 4H-silicon carbide homoepitaxial layers

Zhang, N., Chen, Y., Zhang, Y., Dudley, M., Stahlbush, R. E.

Journal:

Journal of Applied Physics

Année:

2009

Langue:

english

Fichier:

PDF, 621 KB

english, 2009

Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes

Caldwell, J. D., Stahlbush, R. E., Imhoff, E. A., Hobart, K. D., Tadjer, M. J., Zhang, Q., Agarwal, A.

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 896 KB

english, 2009

Gettering of Luminescent Point Defects along Step Bunching in 4H-SiC Epitaxial Layers by Ultraviolet Excitation

Mahadik, N.A., Stahlbush, R.E.

Journal:

Zhang, Qing Chun, Agarwal, Anant, Burk, Albert A., O'Loughlin, Michael J., Palmour, John, Stahlbush, Robert E., Scozzie, Charles

Année:

2015

Langue:

english

Fichier:

PDF, 1.32 MB

english, 2015

Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes

Journal:

Liu, Kendrick, Stahlbush, Robert E, Caldwell, Joshua D, Hobart, Karl D, Kub, Francis J, Sumakeris, Joseph J

Année:

2010

Langue:

english

Fichier:

PDF, 1.06 MB

english, 2010

Non-Destructive Electro- and Photo-Luminescence Imaging of Dislocations in SiC Epitaxy

Journal:

MRS Proceedings

Année:

2006

Langue:

english

Fichier:

PDF, 269 KB

english, 2006

Degradation of Majority Carrier Conductions and Blocking Capabilities in 4H-SiC High Voltage Devices due to Basal Plane Dislocations

Ryu, Sei-Hyung, Zhang, Qingchun, Fatima, Husna, Haney, Sarah, Stahlbush, Robert, Agarwal, Anant

Journal:

MRS Proceedings

Année:

2008

Langue:

english

Fichier:

PDF, 2.18 MB

english, 2008

Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

Mahadik, Nadeemullah A., Stahlbush, Robert E., Nath, Anindya, Tadjer, Marko J., Imhoff, Eugene A., Feygelson, Boris N., Nipoti, Roberta

Journal:

Stahlbush, Robert E., Mahadik, Nadeemullah A., Zhang, Q. Jon, Burk, Albert A., Hull, Brett A., Young, Jonathan

Année:

2014

Langue:

english

Fichier:

PDF, 1.51 MB

english, 2014

Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptions

B. L. Vanmil, R. E. Stahlbush, R. L. Myers-ward, K. Lew, C. R. Eddy, D. K. Gaskill

Année:

2008

Langue:

english

Fichier:

PDF, 635 KB

english, 2008

Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal

Journal:

Tadjer, Marko J., Mahadik, Nadeemullah A., Feigelson, Boris N., Stahlbush, Robert E., Imhoff, Eugene A., Klein, Paul B., Freitas, Jaime A., Greenlee, Jordan D., Kub, Fritz J.

Année:

2015

Langue:

english

Fichier:

PDF, 1023 KB

english, 2015

Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing

Journal:

Stahlbush, R. E., Mahakik, K. N. A., Lelis, A. J., Green, R.

Année:

2015

Langue:

english

Fichier:

PDF, 2.30 MB

english, 2015

[IEEE 2018 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2018.12.1-2018.12.5)] 2018 IEEE International Electron Devices Meeting (IEDM) - Effects of Basal Plane Dislocations on SiC Power Device Reliability

Année:

2018

Langue:

english

Fichier:

PDF, 487 KB

english, 2018

Vibronic spectrum of the U2 isoelectronic center in Si: In

R.E. Stahlbush, R.A. Forman

Journal:

Journal of Luminescence

Année:

1982

Langue:

english

Fichier:

PDF, 334 KB

english, 1982

Spin-flop in a one-dimensional antiferromagnet

R.E. Stahlbush, J.C. Scott

Journal:

Solid State Communications

Année:

1980

Langue:

english

Fichier:

PDF, 654 KB

english, 1980

Infrared photoluminescence in polyacetylene

E.A. Imhoff, D.B. Fitchen, R.E. Stahlbush

Journal:

Solid State Communications

Année:

1982

Langue:

english

Fichier:

PDF, 286 KB

english, 1982

Anomalous positive charge formation by atomic hydrogen exposure

R.E. Stahlbush, E. Cartier, D.A. Buchanan

Journal:

James R. Stahlbush, Robert M. Strom

Année:

1995

Langue:

english

Fichier:

PDF, 324 KB

english, 1995

A decomposition mechanism for cation exchange resins

Journal:

Reactive Polymers

Année:

1990

Langue:

english

Fichier:

PDF, 533 KB

english, 1990

The extraction of gold from cyanide solutions using moderate base polyamine ion exchange resins

W.I. Harris, J.R. Stahlbush, W.C. Pike, R.R. Stevens

Journal:

Reactive Polymers

Année:

1992

Langue:

english

Fichier:

PDF, 399 KB

english, 1992

Trapping dependent H+ motion in SIMOX buried oxides

P.J Macfarlane, R.E Stahlbush

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 341 KB

english, 2001

Light emission from 4H SiC MOSFETs with and without NO passivation

R.E Stahlbush, P.J Macfarlane, J.R Williams, G.Y Chung, L.C Feldman, K McDonald

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 424 KB

english, 2001

The effects of radiation-induced defects on H+ transport in SiO2

R.E. Stahlbush

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 344 KB

english, 1999

The effect of confinement and temperature on the initial hole trapping efficiency of buried oxide films

M.E. Zvanut, Wang Chun, R.E. Stahlbush

Journal:

R. E. Stahlbush, P. J. Macfarlane

Année:

1999

Langue:

english

Fichier:

PDF, 323 KB

english, 1999

Light emission from interface traps and bulk defects in SiC MOSFETs

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 1.80 MB

english, 2001

Stacking-fault formation and propagation in 4H-SiC PiN diodes

R. E. Stahlbush, M. Fatemi, J. B. Fedison, S. D. Arthur, L. B. Rowland, S. Wang

Journal:

Année:

2002

Langue:

english

Fichier:

PDF, 144 KB

english, 2002

Partial dislocations and stacking faults in 4H-SiC PiN diodes

M. E. Twigg, R. E. Stahlbush, M. Fatemi, S. D. Arthur, J. B. Fedison, J. B. Tucker, S. Wang

Journal:

O. J. Glembocki, S. M. Prokes, R. E. Stahlbush, M. F. Macmillan

Année:

2004

Langue:

english

Fichier:

PDF, 762 KB

english, 2004

Cross-polarization imaging and micro-raman detection of defects in the epitaxy of 4H-SiC

Journal:

Suzanne Mohney, Robert Stahlbush, Andrew Allerman

Année:

2005

Langue:

english

Fichier:

PDF, 439 KB

english, 2005

Foreword

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 20 KB

english, 2005

Planar defects in 4H-SiC PiN diodes

M. E. Twigg, R. E. Stahlbush, K. G. Irvine, J. J. Sumakeris, T. P. Chow, P. A. Lossee, L. Zhu

Journal:

Joshua D. Caldwell, Kendrick X. Liu, Marko J. Tadjer, Orest J. Glembocki, Robert E. Stahlbush, Karl D. Hobart, Fritz Kub

Année:

2005

Langue:

english

Fichier:

PDF, 388 KB

english, 2005

Thermal Annealing and Propagation of Shockley Stacking Faults in 4H-SiC PiN Diodes

Journal:

Suzanne Mohney, Robert Stahlbush, Jamie Phillips

Année:

2007

Langue:

english

Fichier:

PDF, 255 KB

english, 2007

Foreword

Journal:

Robert Stahlbush, Debdeep Jena, Jamie Phillips

Année:

2006

Langue:

english

Fichier:

PDF, 28 KB

english, 2006

Foreword

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 99 KB

english, 2007

Characteristics of Dislocation Half-Loop Arrays in 4H-SiC Homo-Epilayer

Z. Zhang, R.E. Stahlbush, P. Pirouz, T.S. Sudarshan

Journal:

Joshua D. Caldwell, Orest J. Glembocki, Robert E. Stahlbush, Karl D. Hobart

Année:

2007

Langue:

english

Fichier:

PDF, 242 KB

english, 2007

Influence of Temperature on Shockley Stacking Fault Expansion and Contraction in SiC PiN Diodes

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 397 KB

english, 2008

Investigation of Electron–Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers

Yi Chen, Ning Zhang, Michael Dudley, Joshua D. Caldwell, Kendrick X. Liu, Robert E. Stahlbush, Xianrong Huang, Albert T. Macrander, David R. Black

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 415 KB

english, 2008

Imaging Surface Pits and Dislocations in 4H-SiC by Forescattered Electron Detection and Photoluminescence

Y.N. Picard, K.X. Liu, R.E. Stahlbush, M.E. Twigg

Journal:

Kendrick X. Liu, Robert E. Stahlbush, Kok-Keong Lew, Rachael L. Myers-Ward, Brenda L. VanMil, Kurt D. Gaskill, Charles R. Eddy

Année:

2008

Langue:

english

Fichier:

PDF, 576 KB

english, 2008

Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging

Journal: